000			00747nam a2200241Ia 4500
003			HQRS
005			20171213034628.0
008			150617s2014 xx 000 0 eng d
040			_aHQRS _beng _cHQRS
041			_heng
080			_b661.665.1 K0
100			_aO'Connor, J.R.
111			_aProceedings of the conference; _cBoston, Massachusetts, _dApril 2-3, 1959
245			_aSilicon carbide : _ba high temperature semiconductor
260			_aOxford: _bPergamon Press, _c1960
300			_axix, 521p.; _c25cm.
650			_aSilicon carbide _xCongresses
650			_aSilicon carbide _xSemiconductor _xCongresses
650			_aSilicon carbide _xDevices _xCongresses
700			_aSmiltens, J., ed.
365			_aINR
942			_2udc _cBK
999			_c4304 _d4304